Light-induced defect creation in hydrogenated amorphous silicon: A detailed examination using junction-capacitance methods

Journal Article · Fri May 15 00:00:00 EDT 1987 · Phys. Rev. B: Condens. Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.35.7776· OSTI ID:6092516

Mahavadi, K K; Zellama, K; Cohen, J D; Harbison, J P

From junction-capacitance measurements we have determined the density, energy distribution, and electronic occupation of light-induced metastable defects near the midgap for a set of nearly intrinsic hydrogenated-amorphous-silicon samples with well-characterized impurity levels. In particular, we have inferred the changes in both neutral and negative dangling bonds for a series of isochronal anneals between the light-soaked state and full-dark-annealed state of each sample. Our results indicate that the dominant defect-creation mechanism is not Si--Si bond breaking, and also indicate the existence of at least two quasi-independent metastable defect-creation processes.

• Research Organization: University of Oregon, Eugene, Oregon 97403
• OSTI ID: 6092516
• Journal Information: Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 35:14; ISSN PRBMD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
CAPACITANCE
CHEMICAL REACTIONS
COLLISIONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DENSITY
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELEMENTS
FILMS
HYDROGENATION
IMPURITIES
LASER RADIATION
PHOTON COLLISIONS
PHYSICAL PROPERTIES
RADIATIONS
SEMIMETALS
SILICON