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LaSrGaO sub 4 substrate gives oriented crystalline YBa sub 2 Cu sub 3 O sub 7 minus y films

Journal Article · · Applied Physics Letters; (United States)
DOI:https://doi.org/10.1063/1.105842· OSTI ID:6225168
;  [1]; ;  [2]
  1. Department of Electronic Engineering, Faculty of Science and Technology, Kinki University, 3-4-1 Kowakae Higashiosaka, Osaka 577 (Japan)
  2. The Institute of Scientific and Industrial Research, Osaka University, Mihogaoka, Ibaraki, Osaka 567 (Japan)
As-grown YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital y}} (YBCO) thin films of 70 nm thickness have been prepared on LaSrGaO{sub 4}(001), (100), and (110) single-crystal substrates at 700 {degree}C using ArF laser ablation deposition. The {ital c}-axis oriented thin films with smooth surface morphology are obtained on LaSrGaO{sub 4} (001) and (100) substrates. The zero resistance temperatures ({ital T}{sub {ital c}}) of the films on the (001) and (100) substrates are 90.0 K, and 88.1 K, respectively. On the (110) substrate, (110) YBCO planes grow epitaxially. The resistance perpendicular to the {ital c} axis in this film is 1/3 of that parallel to the {ital c} axis, showing {ital T}{sub {ital c}{perpendicular}}=85.9 K and {ital T}{sub {ital c}{parallel}}=84.4 K, respectively. These results suggest that a LaSrGaO{sub 4} substrate having a low dielectric constant is an excellent substrate for the epitaxial growth and device application of high-{ital T}{sub {ital c}} YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital y}} superconducting films.
OSTI ID:
6225168
Journal Information:
Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 59:22; ISSN APPLA; ISSN 0003-6951
Country of Publication:
United States
Language:
English