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U.S. Department of Energy
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LPCVD process for depositing titanium nitride (tin) films and silicon substrates produced thereby

Patent ·
OSTI ID:6207315
A process is described for depositing titanium nitride films on silicon substrates which includes the steps of: (a) heating a silicon substrate to an elevated temperature within a reaction chamber operated at a negative pressure, and (b) introducing a mixture of tetramethylamidotitanium (TMAT), nitrogen trifluoride, and a selected carrier and dilution gas into said reaction chamber to deposit titanium nitride films on the surface of said silicon wafer.
Assignee:
Micron Technology, Inc., Bosie, ID (United States)
Patent Number(s):
A; US 5227334
Application Number:
PPN: US 7-785681
OSTI ID:
6207315
Country of Publication:
United States
Language:
English