LPCVD process for depositing titanium nitride (tin) films and silicon substrates produced thereby
Patent
·
OSTI ID:6207315
A process is described for depositing titanium nitride films on silicon substrates which includes the steps of: (a) heating a silicon substrate to an elevated temperature within a reaction chamber operated at a negative pressure, and (b) introducing a mixture of tetramethylamidotitanium (TMAT), nitrogen trifluoride, and a selected carrier and dilution gas into said reaction chamber to deposit titanium nitride films on the surface of said silicon wafer.
- Assignee:
- Micron Technology, Inc., Bosie, ID (United States)
- Patent Number(s):
- A; US 5227334
- Application Number:
- PPN: US 7-785681
- OSTI ID:
- 6207315
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
ELEMENTS
FILMS
FLUORIDES
FLUORINE COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
HEATING
NITRIDES
NITROGEN COMPOUNDS
PNICTIDES
SEMIMETALS
SILICON
SUBSTRATES
SURFACE COATING
TITANIUM COMPOUNDS
TITANIUM NITRIDES
TRANSITION ELEMENT COMPOUNDS
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
ELEMENTS
FILMS
FLUORIDES
FLUORINE COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
HEATING
NITRIDES
NITROGEN COMPOUNDS
PNICTIDES
SEMIMETALS
SILICON
SUBSTRATES
SURFACE COATING
TITANIUM COMPOUNDS
TITANIUM NITRIDES
TRANSITION ELEMENT COMPOUNDS