Growth and properties of LPCVD titanium nitride as a diffusion barrier for silicon device technology
Journal Article
·
· Journal of the Electrochemical Society; (USA)
- Varian Associates, Inc., Palo Alto, CA (USA). Varian Research Center
Chemical vapor deposition has been used to deposit titanium nitride (TiN) on silicon wafers at low pressures in a cold-wall single-wafer reactor. Experiments are reported for pressures in the range of 100-300 mtorr and temperatures between 450{degrees}-700{degrees}C, with titanium tetrachloride and ammonia as reactants. Both hydrogen and nitrogen are evaluated as diluents. Deposition rates as high as 1000 {angstrom}/min have been achieved. The chemical nature of the films are evaluated by Auger and RBS techniques, while the morphology is depicted by SEM. For the most part, the films are stoichiometric and contain small quantities of oxygen, chlorine, and hydrogen.
- OSTI ID:
- 6563563
- Journal Information:
- Journal of the Electrochemical Society; (USA), Journal Name: Journal of the Electrochemical Society; (USA) Vol. 137:6; ISSN 0013-4651; ISSN JESOA
- Country of Publication:
- United States
- Language:
- English
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Journal Article
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Thu Jul 01 00:00:00 EDT 1993
· Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
·
OSTI ID:161694
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Thesis/Dissertation
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Mon Dec 31 23:00:00 EST 1990
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OSTI ID:7019062
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Related Subjects
36 MATERIALS SCIENCE
360602 -- Other Materials-- Structure & Phase Studies
360603* -- Materials-- Properties
656002 -- Condensed Matter Physics-- General Techniques in Condensed Matter-- (1987-)
656003 -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALLOYS
ALUMINIUM
BORON ADDITIONS
BORON ALLOYS
CHEMICAL COATING
CHEMICAL REACTORS
CHEMICAL VAPOR DEPOSITION
CHLORINE
DEPOSITION
DIFFUSION BARRIERS
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
ELECTRON MICROSCOPY
ELEMENTS
EPITAXY
EQUIPMENT
HALOGENS
HYDROGEN
LIQUID PHASE EPITAXY
LOW PRESSURE
METALS
MICROSCOPY
MORPHOLOGY
NITRIDES
NITROGEN COMPOUNDS
NONMETALS
OXYGEN
PNICTIDES
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
STOICHIOMETRY
SURFACE COATING
TITANIUM COMPOUNDS
TITANIUM NITRIDES
TRANSITION ELEMENT COMPOUNDS
360602 -- Other Materials-- Structure & Phase Studies
360603* -- Materials-- Properties
656002 -- Condensed Matter Physics-- General Techniques in Condensed Matter-- (1987-)
656003 -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALLOYS
ALUMINIUM
BORON ADDITIONS
BORON ALLOYS
CHEMICAL COATING
CHEMICAL REACTORS
CHEMICAL VAPOR DEPOSITION
CHLORINE
DEPOSITION
DIFFUSION BARRIERS
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
ELECTRON MICROSCOPY
ELEMENTS
EPITAXY
EQUIPMENT
HALOGENS
HYDROGEN
LIQUID PHASE EPITAXY
LOW PRESSURE
METALS
MICROSCOPY
MORPHOLOGY
NITRIDES
NITROGEN COMPOUNDS
NONMETALS
OXYGEN
PNICTIDES
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
STOICHIOMETRY
SURFACE COATING
TITANIUM COMPOUNDS
TITANIUM NITRIDES
TRANSITION ELEMENT COMPOUNDS