High efficiency amorphous silicon solar cells fabricated by reactive sputtering

Conference · Sun May 01 00:00:00 EDT 1983 · Proc. - Electrochem. Soc.; (United States)

OSTI ID:6204785

Moustakas, T D

This paper describes the effect of a number of deposition parameters on the photovoltaic properties of intrinsic amorphous silicon films produced by RF sputtering. The authors find that the argon pressure and the power in the discharge affect the photovoltaic properties through the modification of the film's microstructure. Hydrogen incorporation and small levels of phosphorus and boron impurities affect the photovoltaic properties through reduction of residual dangling bond related defects and modification of their occupation. These optimization studies lead to intrinsic films, which when incorporated in P-I-N solar cell structures, generate external currents up to 13 mA/cm/sup 2/ and open circuit voltages of between 0.85 to 0.95 volts. The efficiency of these devices, 5.5%, is limited by the low FF, typically less than 50%.

• Research Organization: Exxon Research and Engineering Company, Linden, New Jersey
• OSTI ID: 6204785
• Report Number(s): CONF-8305161-
• Journal Information: Proc. - Electrochem. Soc.; (United States), Journal Name: Proc. - Electrochem. Soc.; (United States) Vol. 83-11; ISSN PESOD
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ARGON
BORON
COATINGS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CURRENTS
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
ELEMENTS
EQUIPMENT
FABRICATION
FILMS
FLUIDS
GASES
HYDROGEN
IMPURITIES
MATERIALS
MICROSTRUCTURE
N-TYPE CONDUCTORS
NONMETALS
OPTIMIZATION
P-TYPE CONDUCTORS
PHOSPHORUS
PHOTOCONDUCTIVITY
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
RARE GASES
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SPUTTERING
VAPOR DEPOSITED COATINGS