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Optoelectronic properties of boron compensated amorphous silicon solar cells

Conference · · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
OSTI ID:6026019

It has been reported by a number of laboratories that the doping of the ''intrinsic'' region of the hydrogenated amorphous silicon solar cells with low levels of boron has a large effect on cell performance. More specifically it has been found that introduction of less than 1 ppm of boron in the amorphous silicon network improves the response of the solar cell in the long wavelength region and adds to their stability on light exposure. High levels of boron lead to the rapid deterioration of cell performance. These phenomena are not yet fully understood. In this paper the authors report the investigation of the optoelctronic properties of reactively sputtered amorphous silicon films and solar cells which were deposited with small amounts of B/sub 2/H/sub 6/ in the Ar-H/sub 2/ discharge. The films studied were produced with variable amounts of hydrogen because hydrogen incorporation affects both the density of dangling bonds as well as the doping efficiency. Emphasis was placed on determining the densities and the nature of states in the gap affecting the optical, recombination and transport properties of these films.

Research Organization:
Corporate Research Laboratory, Exxon Research and Engineering Company, Clinton Township, Annandale, NJ
OSTI ID:
6026019
Report Number(s):
CONF-840561-
Journal Information:
Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States), Journal Name: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States); ISSN CRCND
Country of Publication:
United States
Language:
English