Compensated amorphous silicon solar cell

Patent · Tue Oct 11 00:00:00 EDT 1983

OSTI ID:5281892

Devaud, G

An amorphous silicon solar cell is disclosed including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon over said substrate and having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the electrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF/sub 3/ doped intrinsic layer.

• Assignee: Dept. of Energy
• Patent Number(s): US 4409424
• OSTI ID: 5281892
• Resource Relation: Patent File Date: Filed date 21 Jun 1981; Other Information: PAT-APPL-390730
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SILICON SOLAR CELLS
DESIGN
AMORPHOUS STATE
BORANES
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
LAYERS
BORON COMPOUNDS
DIRECT ENERGY CONVERTERS
ELECTRICAL PROPERTIES
EQUIPMENT
MATERIALS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion