Compensated amorphous-silicon solar cell

Patent · Mon Jun 21 04:00:00 EDT 1982

OSTI ID:5624356

Devaud, G

An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the elecrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF/sub 3/ doped intrinsic layer.

• DOE Contract Number: AC02-77CH00178
• Assignee: ERA-08-053787; EDB-83-175715
• Patent Number(s): None
• Application Number: ON: DE83018087
• OSTI ID: 5624356
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
AMORPHOUS STATE
BORON COMPOUNDS
BORON FLUORIDES
DESIGN
DIRECT ENERGY CONVERTERS
ELECTRIC DISCHARGES
EQUIPMENT
FLUORIDES
FLUORINE COMPOUNDS
GLOW DISCHARGES
HALIDES
HALOGEN COMPOUNDS
HYDROGEN ADDITIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT