Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Properties and photovoltaic applications of microcrystalline silicon films prepared by RF reactive sputtering

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.336145· OSTI ID:5584008

Undoped, phosphorus-, and boron-doped microcrystalline silicon films were prepared by RF reactive sputtering, and their properties were investigated through structural, optical, and transport measurements. The merits of microcrystalline films for the p and n contacts in photovoltaic devices were demonstrated through the fabrication of single and tandem p-i-n solar-cell structures with best efficiencies between 5 and 6%.

Research Organization:
Corporate Research Laboratory, Exxon Research and Engineering Company, Annandale, New Jersey 08801
OSTI ID:
5584008
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 58:2; ISSN JAPIA
Country of Publication:
United States
Language:
English