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Title: Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets

Abstract

A silicon PIN microcrystalline/amorphous silicon semiconductor device is constructed by the sputtering of N, and P layers of silicon from silicon doped targets and the I layer from an undoped target, and at least one semi-transparent ohmic electrode.

Inventors:
 [1];  [1]
  1. (Annandale, NJ)
Publication Date:
OSTI Identifier:
865390
Patent Number(s):
US 4508609
Application Number:
06/535,902
Assignee:
Exxon Research & Engineering Co. (Florham Park, NJ) OSTI
DOE Contract Number:  
XZ092191
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; sputtering; microcrystalline; amorphous; silicon; semiconductor; device; n-layers; sputtered; boron; phosphorous; heavily; doped; targets; constructed; layers; layer; undoped; target; semi-transparent; ohmic; electrode; heavily doped; amorphous silicon; semiconductor device; semi-transparent ohmic; ohmic electrode; silicon semiconductor; transparent ohmic; /204/136/257/

Citation Formats

Moustakas, Theodore D., and Maruska, H. Paul. Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets. United States: N. p., 1985. Web.
Moustakas, Theodore D., & Maruska, H. Paul. Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets. United States.
Moustakas, Theodore D., and Maruska, H. Paul. Tue . "Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets". United States. https://www.osti.gov/servlets/purl/865390.
@article{osti_865390,
title = {Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets},
author = {Moustakas, Theodore D. and Maruska, H. Paul},
abstractNote = {A silicon PIN microcrystalline/amorphous silicon semiconductor device is constructed by the sputtering of N, and P layers of silicon from silicon doped targets and the I layer from an undoped target, and at least one semi-transparent ohmic electrode.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1985},
month = {4}
}

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