Majority and minority carrier traps in monocrystalline CuInSe[sub 2]

Journal Article · Sun Jan 31 23:00:00 EST 1993 · Journal of Electronic Materials (A.I.M.E. Metallurgical Society); (United States)

DOI:https://doi.org/10.1007/BF02665026· OSTI ID:6203391

Li, A L; Shih, I ^[1]

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1. McGill Univ., Montreal (Canada)

Electron and hole traps in Bridgeman-grown monocrystalline CuInSe[sub 2] were investigated by carrying out deep level transient spectroscopy measurements on homojunctions, Al-CuInSe[sub 2] (p-type), and Au-CuInSe[sub 2] (n-type) Schottky junctions. Three hole trap levels and two electron trap levels were observed on these devices. Effects of oxygen and etching on the electron trap level at 182 [+-] 15 meV from the conduction band edge were specifically studied. It was found that the election trap densities in the homojunctions prepared using the CuInSe[sub 2] samples treated in NH[sub 2]NH[sub 2] solution, which absorbes oxygen atoms in the samples, were larger than the electron trap densities in the homojunctions prepared using untreated samples. Moreover, the electron trap densities in the homojunctions after prolonged heat treatment in O[sub 2] were less than that without prolonged heat treatment. The results thus suggested that oxygen atoms in CuInSe[sub 2] can reduce the electron trap density of p-type CuInSe[sub 2]. The effects of chemical etching on these electron traps were also studied. The excess indium atoms in the CuInSe[sub 2] were considered to affect the electron traps. 10 refs., 2 figs., 4 tabs.

• OSTI ID: 6203391
• Journal Information: Journal of Electronic Materials (A.I.M.E. Metallurgical Society); (United States), Journal Name: Journal of Electronic Materials (A.I.M.E. Metallurgical Society); (United States) Vol. 22:2; ISSN JECMA5; ISSN 0361-5235
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360606 -- Other Materials-- Physical Properties-- (1992-)
COPPER COMPOUNDS
DATA
DIRECT ENERGY CONVERTERS
ELECTRONS
ELEMENTARY PARTICLES
ELEMENTS
EQUIPMENT
ETCHING
FERMIONS
HEAT TREATMENTS
HOLES
HOMOJUNCTIONS
HYDRAZINE
INDIUM COMPOUNDS
INFORMATION
JUNCTIONS
LEPTONS
MATERIALS
NITROGEN COMPOUNDS
NONMETALS
NUMERICAL DATA
OXYGEN
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SELENIUM COMPOUNDS
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SOLAR EQUIPMENT
SPECTROSCOPY
SURFACE FINISHING
THEORETICAL DATA
TRANSITION ELEMENT COMPOUNDS
TRAPS