Monocrystalline CuInSe{sub 2}-CdO cell
- Electrical Engineering Department, McGill University, Montreal, Quebec, Canada H3A-2A7 (Canada)
Photovoltaic cells of the form CuInSe{sub 2}(p)-CdO(n) have been fabricated by sputtering a layer of CdO on the cleaved surface of a monocrystalline substrate obtained from a Bridgman-grown CuInSe{sub 2} ingot. Despite an apparent 23{percent} lattice mismatch between CdO and CuInSe{sub 2}, the cells gave conversion efficiencies of about 4{percent} using unannealed substrates and about 6{percent} with substrates annealed in argon at atmospheric pressure. The heat-treatment appears to reduce the acceptor concentration near the surface of the CuInSe{sub 2} substrate, resulting in an increase of fill factor. The insensitivity of photovoltaic activity to lattice mismatch in the CuInSe{sub 2}-CdO cells may be due to the seat of action lying below the substrate surface. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 575567
- Report Number(s):
- CONF-961178--
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 394; ISSN 0094-243X; ISSN APCPCS
- Country of Publication:
- United States
- Language:
- English
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