Single layer chemically amplified resist processes for device fabrication by x-ray lithography

Conference · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

OSTI ID:6198384

Seeger, D; Viswanathan, R; Blair, C; Gelorme, J ^[1]; Conley, W ^[2]

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1. Thomas J. Watson Research Center, Yorktown, NY (United States)
2. IBM General Technology Division, East Fishkill, NY (United States)

Resist systems using synchrotron radiation x-ray lithography for the fabrication of 0.25 [mu]m (Leff) devices have been previously investigated. In this study, a chemically amplified negative crosslinking IBM resist, CGR [W. Conley and J. Gelorme, J. Vac. Sci. Technol. B 10, 2570 (1992)], for use on the contact level was the focus. Linewidth control and contrast curves of this system have been studied as a function of a number of parameters including changes in formulations. Mask limited resolution to 0.25 [mu]m feature size (line/space array) has been achieved using a 40 [mu]m mask-to-wafer gap. More important for device fabrication, reproducibility of exposure latitude and resist bias has been demonstrated and will be discussed. Data on the effect of postapply and postexposure bake conditions on the process will also be presented. It is of interest to note that this resist shows little change in linewidth with respect to postexposure bake temperature. This resist system was modeled using aerial images generated from XMAS and a thresholding resist development model. The model indicates that the wall profiles for this resist should be somewhat more tapered for isolated spaces than for isolated lines or line/space arrays and is verified experimentally. It is believed that this is related to the slope of the aerial image at the dose used and not inherent to the resist system. A positive resist was also looked at for application on the polysilicon level. A process that has been previously described was used to look at linewidth control across device wafers. Line widths for the polysilicon gates were measured across topography, across field, and from field-to-field and will be described in detail. 6 refs., 11 figs.

• OSTI ID: 6198384
• Report Number(s): CONF-920575--; CNN: N0019-91-C-0207
• Conference Information: Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Journal Volume: 10:6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
42 ENGINEERING
420200* -- Engineering-- Facilities
Equipment
& Techniques
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
BREMSSTRAHLUNG
CHEMICAL PREPARATION
CHEMICAL REACTIONS
COATINGS
CROSS-LINKING
DATA
ELECTROMAGNETIC RADIATION
ELEMENTS
EXPERIMENTAL DATA
FABRICATION
IMAGES
INFORMATION
MASKING
NUMERICAL DATA
POLYMERIZATION
RADIATIONS
RESOLUTION
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
SURFACE FINISHING
SYNCHROTRON RADIATION
SYNTHESIS
TOPOGRAPHY