Characteristics of an improved chemically amplified deep-ultraviolet positive resist

Conference · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

OSTI ID:6134272

Nalamasu, O; Kometani, J; Cheng, M; Timko, A G; Reichmanis, E ^[1]; Slater, S; Blakeney, A ^[2]

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1. AT T Bell Laboratories, Murray Hill, NJ (United States)
2. OCG Microelectronic Materials, Inc., East Providence, RI (United States)

Chemically amplified positive resist formulations have been shown to exhibit high photospeed, excellent resolution, and tolerance to process parameters such as softbake, exposure, postexposure bake, developer concentration, and temperature. Many chemically amplified positive resists, however, adhered poorly to some substrates (e.g., Si[sub 3]N[sub 4]), required considerable optimization of the etch process to achieve desired etch selectivities and were sensitive to airborne basic contaminants. Many chemically amplified negative resists while not as sensitive to contaminants in the clean room air, show retrograde wall angles especially on antireflection coatings, demonstrate poor latitude in defining contact holes and are difficult to strip after pattern transfer steps. In this article the authors discuss their efforts toward designing new deep-ultraviolet (UV) matrix resins and resist formulations as well as efforts toward defining an optimized process. The optimized resist process demonstrates 0.25 [mu]m line and space (L/S) and 0.30 [mu]m contact bole resolution in 0.8 [mu]m thick resist films with a GCA deep-UV exposure tool. The resist also exhibits excellent adhesion on most semiconductor substrates (e.g., SiO polysilicon, SiO[sub 2], Si[sub 3]N[sub 4]), thermal stability to at least 140[degrees]C, an order of improvement in postexposure delay latitude over that of CAMP1 (poly t-butoxycarbonyloxystyrene-sulfone formulated with photoacid generators) and etch selectivity comparable to that of novolac based resists. In addition, the polymers developed were designed for ease of manufacture with regard to reproducibility, low metal concentration, and cost. 15 refs., 4 figs., 4 tabs.

• OSTI ID: 6134272
• Report Number(s): CONF-920575--
• Conference Information: Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Journal Volume: 10:6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360600* -- Other Materials
ADHESION
COST
DEPOSITION
ELECTROMAGNETIC RADIATION
ETCHING
FABRICATION
FILMS
MASKING
MATERIALS
OPTIMIZATION
ORGANIC COMPOUNDS
ORGANIC POLYMERS
PETROCHEMICALS
PETROLEUM PRODUCTS
PHYSICAL PROPERTIES
POLYMERS
RADIATIONS
RESINS
SEMICONDUCTOR MATERIALS
SURFACE COATING
SURFACE FINISHING
THERMODYNAMIC PROPERTIES
ULTRAVIOLET RADIATION