Positive tone camp resists sensitive to I-line irradiation
Conference
·
OSTI ID:141839
- OCG Microelectronic Materials Inc., E. Providence, RI (United States)
- Microelectronic Materials Inc., Basel (Switzerland)
Chemically amplified resist materials have been the subject of numerous studies in recent years in attempts to develop and commercialize high resolution photoresists. The majority of these studies have dealt with deep UV exposure. Few chemically amplified I-line resists (mostly negative resists) have been developed and commercialized. This paper will describe and compare the chemistry and lithographic effects of a series of I-line sensitive photoacid generators in polymer matrixes developed for Deep UV lithography. The results will also be compared to state of the art DNQ/novolac based I-line resists.
- OSTI ID:
- 141839
- Report Number(s):
- CONF-930304--
- Country of Publication:
- United States
- Language:
- English
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