The development of DUV chemically amplified resists
Conference
·
OSTI ID:141838
- Shipley Co. Inc., Marlboro, MA (United States)
The development of deep ultraviolet (DUV) resists has necessitated the introduction of new concepts in resist materials and chemistry. Successful DUV resist systems now employ the concept of chemical amplification. This catalytic reaction leads to a substantial enhancement in the imaging dose. Another benefit of chemical amplified resists is that they allow the design of materials which can be transparent to DUV exposure wavelengths, yet they can still have high sensitivity. Commercial and prototype positive- and negative-tone resists are now readily available and these resists have been used in pilot production to make the most advanced integrated circuits with {le}0.35 {mu}m design rules. At Shipley, we have undertaken to develop both negative- and positive-tone chemically amplified resists for DUV lithography. These resists are capable of high resolution (0.3 {mu}m), fast photospeed ({le}30 mJ/sq. cm), and excellent etch resistance. This presentation will discuss the chemical and lithographic properties of the Shipley negative- and positive-tone DUV chemically amplified resists. General discussion of the importance of activation energy for the catalytic process, catalytic chain length, and environmental stability will be given.
- OSTI ID:
- 141838
- Report Number(s):
- CONF-930304--
- Country of Publication:
- United States
- Language:
- English
Similar Records
Polymer Effects on Acid Generation Efficiency Using EUV and DUV Exposures
Characteristics of an improved chemically amplified deep-ultraviolet positive resist
Comparison of the lithographic properties of positive resists upon exposure to deep- and extreme-ultraviolet radiation
Conference
·
Tue May 30 00:00:00 EDT 2000
·
OSTI ID:758913
Characteristics of an improved chemically amplified deep-ultraviolet positive resist
Conference
·
· Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)
·
OSTI ID:6134272
Comparison of the lithographic properties of positive resists upon exposure to deep- and extreme-ultraviolet radiation
Journal Article
·
Sun Oct 31 23:00:00 EST 1999
· Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
·
OSTI ID:20217910