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Imaging of submicron index variations by scanning optical tunneling

Journal Article · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)
DOI:https://doi.org/10.1116/1.586036· OSTI ID:6188907
; ;  [1]
  1. Universite de Franche-Comte, Besancon (France)

The scanning tunneling optical microscope (SNOM, STOM, PSTM, etc.) is the equivalent of the electron scanning tunneling microscope in the electromagnetic domain. Although it was born at the same time, its actual development is more recent. Here, some new results obtained with the version working in total reflection (STOM/PSTM) are reported. A grating of a periodicity of 417 nm and a thickness of 5 nm have been imaged both in TM and TE modes. It is first noted that the optical image is well resolved. Furthermore, the difference of behavior of the field versus the polarization of the incident light has been shown. More precisely, the TM mode seems to be highly sensitive to small index and topography variations due to surface contaminants. Such effects are generally not imaged by atomic force microscopy working in attractive mode, because they affect the surface topography slightly. The SNOM could be thus a very powerful tool for detecting pollutants over the surface of objects like glasses, lenses, gratings, etc., and in the biology domain. 13 refs., 4 figs.

OSTI ID:
6188907
Journal Information:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 10:6; ISSN 0734-211X; ISSN JVTBD9
Country of Publication:
United States
Language:
English

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