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Thermal optical bistability in InGaAs/InAlAs MQW etalons at 1. 5. mu. m wavelength

Journal Article · · IEEE Photonics Technol. Lett.; (United States)
DOI:https://doi.org/10.1109/68.87895· OSTI ID:6183864

Optical bistability due to thermally induced refractive index changes is observed in MBE-grown InGaAs/InAlAs MQW etalon devices at around a 1.5 ..mu..m wavelength. The relation between optical bistable characteristics and incident beam wavelength is studied in detail using a tunable F-center laser.

Research Organization:
NTT Opto-Electronics Labs., 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-01 (JP); Yamagata Univ., Yonezawa-Shi, Yamagata 992 (JP)
OSTI ID:
6183864
Journal Information:
IEEE Photonics Technol. Lett.; (United States), Journal Name: IEEE Photonics Technol. Lett.; (United States) Vol. 1:3; ISSN IPTLE
Country of Publication:
United States
Language:
English

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