Thermal optical bistability in InGaAs/InAlAs MQW etalons at 1. 5. mu. m wavelength
Journal Article
·
· IEEE Photonics Technol. Lett.; (United States)
Optical bistability due to thermally induced refractive index changes is observed in MBE-grown InGaAs/InAlAs MQW etalon devices at around a 1.5 ..mu..m wavelength. The relation between optical bistable characteristics and incident beam wavelength is studied in detail using a tunable F-center laser.
- Research Organization:
- NTT Opto-Electronics Labs., 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-01 (JP); Yamagata Univ., Yonezawa-Shi, Yamagata 992 (JP)
- OSTI ID:
- 6183864
- Journal Information:
- IEEE Photonics Technol. Lett.; (United States), Journal Name: IEEE Photonics Technol. Lett.; (United States) Vol. 1:3; ISSN IPTLE
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360603 -- Materials-- Properties
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BEAM OPTICS
FREE ELECTRON LASERS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
LASERS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
WAVELENGTHS
360603 -- Materials-- Properties
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BEAM OPTICS
FREE ELECTRON LASERS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
LASERS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
WAVELENGTHS