InGaAs/InAlAs bistable multiple quantum well lasers with large on/off ratio using the resonant tunneling effect

Journal Article · Mon Oct 17 00:00:00 EDT 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.99967· OSTI ID:6928855

Kawamura, Y; Wakita, K; Mikami, O

Bistable operation with a large on/off ratio of 800:1 is achieved in InGaAs/InAlAs multiple quantum well (MQW) lasers using the resonant tunneling effect at 77 K. Structural dependence of resonant tunneling characteristic in the MQW structures reveals that the threshold current density, at which negative differential resistance appears, increases drastically when the InAlAs barrier width of MQW structures decreases. The increase in the threshold current density has led to an improvement in the bistable characteristics of InGaAs/InAlAs MQW lasers.

• Research Organization: NTT Optoelectronics Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-01, Japan
• OSTI ID: 6928855
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 53:16; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENT DENSITY
CURRENTS
DATA
ELECTRIC CURRENTS
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFORMATION
LASERS
LOW TEMPERATURE
NUMERICAL DATA
OPERATION
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
THRESHOLD CURRENT
TUNNEL EFFECT