Monolithic integration of a DFB laser and an MQW optical modulator in the 1. 5. mu. m wavelength range

Journal Article · Mon Jun 01 00:00:00 EDT 1987 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1987.1073439· OSTI ID:6319065

Kawamura, Y; Wakita, K; Yoshikuni, Y; Itaya, Y; Asahi, H

A monolithically integrated device with an improved structure consisting of an InGaAsP/InP DFB laser and an InGaAs/InAlAs MQW optical modulator was fabricated by the LPE (liquid phase epitaxy)/MBE (molecular beam epitaxy) hybrid growth technique. The DFB laser in this device was operated at 1.556 ..mu..m under CW condition at room temperature. A narrow coupling region between laser and modulator results in a depth of modulation as high as 55 percent at a modulator reverse bias voltage of -5 V. High-speed modulation with a response time of 300 ps was also achieved in this monolithic device.

• Research Organization: NTT Electrical Communications Labs., 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-01
• OSTI ID: 6319065
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-23:6; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMBIENT TEMPERATURE
ARSENIC COMPOUNDS
ARSENIDES
COUPLING
DESIGN
EPITAXY
EQUIPMENT
EQUIPMENT INTERFACES
FABRICATION
FEEDBACK
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HYBRID SYSTEMS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASERS
LIQUID PHASE EPITAXY
MODULATION
MOLECULAR BEAM EPITAXY
OPTICAL EQUIPMENT
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
WAVELENGTHS