Characterization of pseudomorphic InGaAs channel modulation-doped field-effect-transistor structures grown by molecular-beam epitaxy

Journal Article · Mon Oct 15 04:00:00 EDT 1990 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.346239· OSTI ID:6180537

Kopf, R F; Kuo, J M; Kovalchick, J; Pearton, S J ^[1]; Jones, E D ^[2]; Ourmazd, A ^[3]

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1. AT T Bell Laboratories, Murray Hill, NJ (USA)
2. Sandia National Laboratories, Albuquerque, NM (USA)
3. AT T Bell Laboratories, Holmdel, NJ (USA)

This paper compares Hall-effect measurements combined with rapid thermal annealing (RTA) and low-temperature photoluminescence (4-K PL) as characterization techniques for the optimization of the growth of pseudomorphic InGaAs channel modulation-doped field-effect-transistor structures. The Hall-effect measurements with the RTA were used to determine the optimized growth temperature. 4-K PL was used to determine the quality of the InGaAs quantum well and the In mole fraction.

• OSTI ID: 6180537
• Journal Information: Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 68:8; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
DOPED MATERIALS
EPITAXY
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HALL EFFECT
HEAT TREATMENTS
INDIUM ARSENIDES
INDIUM COMPOUNDS
LUMINESCENCE
MATERIALS
MODULATION
MOLECULAR BEAM EPITAXY
OPTIMIZATION
PHOTOLUMINESCENCE
PNICTIDES
SEMICONDUCTOR DEVICES
TRANSISTORS
ULTRALOW TEMPERATURE