Molecular-beam epitaxial growth and characterization of inverted, pulse-doped AlGaAs/InGaAs transistor structures

Journal Article · Sat May 01 04:00:00 EDT 1993 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.586899· OSTI ID:147054

Hoke, W E; Lyman, P S; Brierley, S K ^[1]

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1. Raytheon Research Division, Lexington, MA (United States); and others

Inverted, pulse-doped AlGaAs/InGaAs pseudomorphic high electron mobility transistor structures were grown by molecular-beam epitaxy. Growth conditions were optimized to improve the quality of the selectively doped AlGaAs layer and to minimize dopant diffusion into the InGaAs channel. The sheet densities and mobilities of the inverted structure were found to be essentially equivalent to those obtained with the normal structure. Shubnikov-de Haas measurements exhibited strong oscillations in the magnetoresistance and plateaus in the Hall resistance. Four optical transitions from the lowest bound electron and hole quantum well states were observed in room-temperature photoluminescence spectra. 15 refs., 4 figs.

• OSTI ID: 147054
• Report Number(s): CONF-9210296--
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 3 Vol. 11; ISSN 0734-211X; ISSN JVTBD9
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
CRYSTAL GROWTH
DOPED MATERIALS
ELECTRON MOBILITY
GALLIUM ARSENIDES
MAGNETORESISTANCE
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
PULSE TECHNIQUES
SILICON IONS
SUPERLATTICES