Electrodeposition of p-CdTe and CdS/CdTe heterojunction devices. Final subcontract report, September 1983-May 1985
The two primary tasks of this research were to fabricate and characterize p-type CdTe thin films by the cathodic electrodeposition technique and to fabricate efficient n-CdS/p-CdTe heterojunction devices using electrodeposited p-CdTe thin films. Past difficulties in electrodeposition involved the in situ fabrication of p-type CdTe thin films by cathodic electrodeposition; n-type material formed more readily than p-type. Some researchers applied post-deposition thermal treatment to induce n to p conversion. This research was conducted to devise suitable chemistry and electrochemistry whereby in situ deposition of p-type material could be induced (a) by increased Te loading of the electrodeposition bath, and (b) by suitable acceptor doping of the electrodeposited material. Both As and Cu were evaluated as dopants; As was found to be more suitable. Inverted structures were fabricated from the p-type CdTe thin films. The best AMl efficiencies achieved to date have been around 5%. Further improvements will depend on solving the problem of high series resistance.
- Research Organization:
- Texas Univ., Arlington (USA). Dept. of Chemistry
- DOE Contract Number:
- AC02-83CH10093
- OSTI ID:
- 6179142
- Report Number(s):
- SERI/STR-211-2789; ON: DE85016878
- Country of Publication:
- United States
- Language:
- English
Similar Records
In situ preparation of p-Type CdTe thin films by cathodic electrodeposition
Electrochemical deposition of p-type CdTe for CdTe/CdS heterojunction devices
Ultra-thin electrodeposited CdS/CdTe heterojunction with 8% efficiency
Journal Article
·
Thu Feb 28 23:00:00 EST 1985
· J. Electrochem. Soc.; (United States)
·
OSTI ID:6392160
Electrochemical deposition of p-type CdTe for CdTe/CdS heterojunction devices
Conference
·
Tue May 01 00:00:00 EDT 1984
· Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
·
OSTI ID:5155947
Ultra-thin electrodeposited CdS/CdTe heterojunction with 8% efficiency
Conference
·
Wed Sep 01 00:00:00 EDT 1982
· Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
·
OSTI ID:5319936
Related Subjects
14 SOLAR ENERGY
140501 -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
ARSENIC
CADMIUM COMPOUNDS
CADMIUM SULFIDES
CADMIUM TELLURIDE SOLAR CELLS
CADMIUM TELLURIDES
CHALCOGENIDES
COPPER
CRYSTAL DOPING
DEPOSITION
DIRECT ENERGY CONVERTERS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRODEPOSITION
ELECTROLYSIS
ELEMENTS
EQUIPMENT
FABRICATION
FILMS
HETEROJUNCTIONS
INORGANIC PHOSPHORS
JUNCTIONS
LYSIS
METALS
OPTICAL PROPERTIES
PHOSPHORS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SOLAR CELLS
SOLAR EQUIPMENT
SULFIDES
SULFUR COMPOUNDS
SURFACE COATING
TELLURIDES
TELLURIUM COMPOUNDS
THIN FILMS
TRANSITION ELEMENTS
140501 -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
ARSENIC
CADMIUM COMPOUNDS
CADMIUM SULFIDES
CADMIUM TELLURIDE SOLAR CELLS
CADMIUM TELLURIDES
CHALCOGENIDES
COPPER
CRYSTAL DOPING
DEPOSITION
DIRECT ENERGY CONVERTERS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRODEPOSITION
ELECTROLYSIS
ELEMENTS
EQUIPMENT
FABRICATION
FILMS
HETEROJUNCTIONS
INORGANIC PHOSPHORS
JUNCTIONS
LYSIS
METALS
OPTICAL PROPERTIES
PHOSPHORS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SOLAR CELLS
SOLAR EQUIPMENT
SULFIDES
SULFUR COMPOUNDS
SURFACE COATING
TELLURIDES
TELLURIUM COMPOUNDS
THIN FILMS
TRANSITION ELEMENTS