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Electrodeposition of p-CdTe and CdS/CdTe heterojunction devices. Final subcontract report, September 1983-May 1985

Technical Report ·
DOI:https://doi.org/10.2172/6179142· OSTI ID:6179142
The two primary tasks of this research were to fabricate and characterize p-type CdTe thin films by the cathodic electrodeposition technique and to fabricate efficient n-CdS/p-CdTe heterojunction devices using electrodeposited p-CdTe thin films. Past difficulties in electrodeposition involved the in situ fabrication of p-type CdTe thin films by cathodic electrodeposition; n-type material formed more readily than p-type. Some researchers applied post-deposition thermal treatment to induce n to p conversion. This research was conducted to devise suitable chemistry and electrochemistry whereby in situ deposition of p-type material could be induced (a) by increased Te loading of the electrodeposition bath, and (b) by suitable acceptor doping of the electrodeposited material. Both As and Cu were evaluated as dopants; As was found to be more suitable. Inverted structures were fabricated from the p-type CdTe thin films. The best AMl efficiencies achieved to date have been around 5%. Further improvements will depend on solving the problem of high series resistance.
Research Organization:
Texas Univ., Arlington (USA). Dept. of Chemistry
DOE Contract Number:
AC02-83CH10093
OSTI ID:
6179142
Report Number(s):
SERI/STR-211-2789; ON: DE85016878
Country of Publication:
United States
Language:
English