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In situ preparation of p-Type CdTe thin films by cathodic electrodeposition

Journal Article · · J. Electrochem. Soc.; (United States)
DOI:https://doi.org/10.1149/1.2113942· OSTI ID:6392160
Recent studies on n-CdS/p-CdTe heterojunction solar cells have reported solar-to-electrical conversion efficiencies approaching the 10% benchmark. Thin films of CdTe required for these devices are fabricated by a variety of methods (e.g., vacuum deposition, screen printing, close-spaced sublimation). Electrodeposition is another candidate technique receiving scrutiny. Although earlier studies had prescribed conditions for cathodic deposition of both n- as well as p-type CdTe, more recent work reveals difficulties with electrodeposition of p-type layers from acidic baths. These difficulties have led to the need for post-deposition thermal treatment of electrodeposited films to induce n ..-->.. p-type conversion. Preliminary evidence for p-type electronic conductivity in the as-deposited films was presented in previous communications. These experiments, however, were conducted on deposition baths containing no intentionally added acceptor impurity (e.g., Cu). The purpose of this note is to present further evidence for p-type conductivity in CdTe thin films containing Cu as well as some data bearing on the direct applicability of these films to n-CdS/p-CdTe heterojunction fabrication.
Research Organization:
Department of Chemistry, The University of Texas at Arlington, Arlington, TX
OSTI ID:
6392160
Journal Information:
J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 132:3; ISSN JESOA
Country of Publication:
United States
Language:
English