Electrochemical deposition of p-type CdTe for CdTe/CdS heterojunction devices

Conference · Tue May 01 04:00:00 EDT 1984 · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)

OSTI ID:5155947

Llabres, J; Axton, R J; Deb, S K; Noufi, R

In this communication, the authors report the insitu fabrication of p-type cadmium telluride electrochemically deposited on high-vacuum evaporated n-CdS to form a heterojunction. CdTe films prepared at cathodic potentials slightly positive of -660 mV (vs.SCE) were p-type and Te-rich. The device consisted of indium tin oxide layer sputtered on glass, a high-vacuum evaporated CdS thin film, an electrochemically deposited CdTe and an evaporated gold ohmic contact. Dark and AMl illumination voltage-current curves showed an open circuit voltage of 525 mV, short-circuit and reverse saturation current densities of about 20 and 4 x 10/sup -5/mA/cm/sup 2/, respectively.

• Research Organization: Solar Energy Research Institute, Golden, Colorado
• OSTI ID: 5155947
• Report Number(s): CONF-840561-
• Conference Information: Journal Name: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CADMIUM COMPOUNDS
CADMIUM SULFIDE SOLAR CELLS
CADMIUM SULFIDES
CADMIUM TELLURIDE SOLAR CELLS
CADMIUM TELLURIDES
CHALCOGENIDES
CHEMICAL COATING
CURRENT DENSITY
CURRENTS
DEPOSITION
DIRECT ENERGY CONVERTERS
ELECTRIC CURRENTS
ELECTROCHEMICAL COATING
EQUIPMENT
FABRICATION
FILMS
GLASS
HETEROJUNCTIONS
INORGANIC PHOSPHORS
JUNCTIONS
MATERIALS
N-TYPE CONDUCTORS
OXIDES
OXYGEN COMPOUNDS
P-TYPE CONDUCTORS
PHOSPHORS
PHOTOCURRENTS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SOLAR EQUIPMENT
SULFIDES
SULFUR COMPOUNDS
SURFACE COATING
TELLURIDES
TELLURIUM COMPOUNDS
THIN FILMS
TIN COMPOUNDS
TIN OXIDES
VACUUM COATING