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Growth of dielectric thin films by irradiation of condensed molecular precursors with synchrotron radiation

Conference ·
OSTI ID:6172067
;  [1]; ;  [2]
  1. State Univ. of New York, Stony Brook, NY (United States). Dept. of Chemistry
  2. Brookhaven National Lab., Upton, NY (United States)
Spectroscopic evidence is presented that shows that boron nitride and aluminum oxide can be synthesized by exposing a condensed layer of molecular precursors to synchrotron radiation. In the Al[sub 2]O[sub 3] circumstance a condensed layer of trimethylaluminum (TMA) and water at 78 K on a silver substrate produces pure layers of aluminum oxide. Using the same condensed layer technique boron nitride is produced by exposing a solid matrix of diborane and ammonia to synchrotron radiation. Near edge x-ray absorption fine structure and core level photoelectron spectroscopies are used to characterize the Al[sub 2]O[sub 3] and BN layers, which were typically 30[Angstrom] thick. During the formation of aluminum oxide the carbon component in the alkylaluminum precursor is completely removed during irradiation as a volatile methane product which was detected by mass spectrometry. In the absence of synchrotron radiation the molecular precursors in both the aluminum oxide and boron nitride systems show evidence of some interactions within the solid, but upon warming to near room temperature (260 K) the layers desorb from the substrate.
Research Organization:
Brookhaven National Lab., Upton, NY (United States)
Sponsoring Organization:
DOE; NSF; USDOE, Washington, DC (United States); National Science Foundation, Washington, DC (United States)
DOE Contract Number:
AC02-76CH00016
OSTI ID:
6172067
Report Number(s):
BNL-48420; CONF-921101--135; ON: DE93016161
Country of Publication:
United States
Language:
English