Growth of dielectric thin films by irradiation of condensed molecular precursors with synchrotron radiation
Conference
·
OSTI ID:10169276
- State Univ. of New York, Stony Brook, NY (United States). Dept. of Chemistry
- Brookhaven National Lab., Upton, NY (United States)
Spectroscopic evidence is presented that shows that boron nitride and aluminum oxide can be synthesized by exposing a condensed layer of molecular precursors to synchrotron radiation. In the Al{sub 2}O{sub 3} circumstance a condensed layer of trimethylaluminum (TMA) and water at 78 K on a silver substrate produces pure layers of aluminum oxide. Using the same condensed layer technique boron nitride is produced by exposing a solid matrix of diborane and ammonia to synchrotron radiation. Near edge x-ray absorption fine structure and core level photoelectron spectroscopies are used to characterize the Al{sub 2}O{sub 3} and BN layers, which were typically 30{Angstrom} thick. During the formation of aluminum oxide the carbon component in the alkylaluminum precursor is completely removed during irradiation as a volatile methane product which was detected by mass spectrometry. In the absence of synchrotron radiation the molecular precursors in both the aluminum oxide and boron nitride systems show evidence of some interactions within the solid, but upon warming to near room temperature (260 K) the layers desorb from the substrate.
- Research Organization:
- Brookhaven National Lab., Upton, NY (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States); National Science Foundation, Washington, DC (United States)
- DOE Contract Number:
- AC02-76CH00016
- OSTI ID:
- 10169276
- Report Number(s):
- BNL--48420; CONF-921101--135; ON: DE93016161
- Country of Publication:
- United States
- Language:
- English
Similar Records
Growth of dielectric thin films by irradiation of condensed molecular precursors with synchrotron radiation
Synchrotron radiation assisted deposition of aluminum oxide from condensed layers of trimethylaluminum and water at 78 K
Low temperature synthesis of boron nitride from condensed diborane and ammonia using synchrotron radiation
Conference
·
Tue Dec 31 23:00:00 EST 1991
·
OSTI ID:6172067
Synchrotron radiation assisted deposition of aluminum oxide from condensed layers of trimethylaluminum and water at 78 K
Journal Article
·
Mon Aug 10 00:00:00 EDT 1992
· Applied Physics Letters; (United States)
·
OSTI ID:7111124
Low temperature synthesis of boron nitride from condensed diborane and ammonia using synchrotron radiation
Journal Article
·
Mon May 18 00:00:00 EDT 1992
· Applied Physics Letters; (United States)
·
OSTI ID:7234693
Related Subjects
36 MATERIALS SCIENCE
360201
665300
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM OXIDES
BORON NITRIDES
CRYSTAL GROWTH
DIELECTRIC MATERIALS
INTERACTIONS BETWEEN BEAMS AND CONDENSED MATTER
NSLS
PHYSICAL RADIATION EFFECTS
PREPARATION AND FABRICATION
SYNCHROTRON RADIATION
SYNTHESIS
THIN FILMS
360201
665300
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM OXIDES
BORON NITRIDES
CRYSTAL GROWTH
DIELECTRIC MATERIALS
INTERACTIONS BETWEEN BEAMS AND CONDENSED MATTER
NSLS
PHYSICAL RADIATION EFFECTS
PREPARATION AND FABRICATION
SYNCHROTRON RADIATION
SYNTHESIS
THIN FILMS