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Differential dissolution and electron-beam lithographic sensitivity of poly(methyl methacrylate). [Gamma radiation]

Journal Article · · Polym. Eng. Sci.; (United States)
OSTI ID:6167541
 [1]; ; ;
  1. U.S. Army Electronics Tech. and Devices Lab., Fort Monmouth, NJ

Photolithographic and electron-beam integrated circuit fabrication techniques rely heavily upon differences in polymer resist dissolution (development) rates to produce circuit patterns. We have applied the wide-line NMR technique, augmented by dynamic nuclear polarization, to the measurement of polymer dissolution rates of poly(methyl methacrylate), (PMMA). At high gamma-ray exposures, we find PMMA to have dissolution rates from 2X to 1000X those of unirradiated material. The highest radiation-enhanced dissolution rates are obtained with carbon tetrachloride-based developer solutions, whereas generally lower enhanced rates are observed with 1:3 acetone or methylethylketone/isopropanol standard developer. E-beam line exposures are developed in PMMA and poly(ethyl methacrylate), PEMA, resists using similar developers for comparison. Using straight CCl/sub 4/ as a developer, e-beam lines 1-2..mu.. wide were developed in 3800 A thick PEMA resist at 1 x 10/sup -5/ C/cm/sup 2/ with less than or equal to 200 A loss in unexposed resist thickness. The higher differential dissolution with CCl/sub 4/, a poorer solvent for unirradiated PMMA than acetone or MEK, is explained by decline in polarity of PMMA by radiation-induced decarboxylation. 5 figures.

OSTI ID:
6167541
Journal Information:
Polym. Eng. Sci.; (United States), Journal Name: Polym. Eng. Sci.; (United States) Vol. 17:6; ISSN PYESA
Country of Publication:
United States
Language:
English

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