Charge transfer efficiency in proton damaged CCD`s
- Simon Fraser Univ., Burnaby, British Columbia (Canada). School of Engineering Science
- National Research Council of Canada, Victoria, British Columbia (Canada). Herzberg Inst. of Astrophysics
The authors have performed detailed measurements of the charge transfer efficiency (CTE) in a thinned, backside-illuminated imaging charge-coupled device (CCD). The device had been damaged in three separate sections by proton radiation typical of that which a CCD would receive in space-borne experiments, nuclear imaging, or particle detection. They examined CTE as a function of signal level, temperature, and radiation dose. The dominant factor affecting the CTE in radiation-damaged CCD`s is seen to be trapping by bulk states. They present a simple physical model for trapping as a function of transfer rate, trap concentration, and temperature. They have made calculations using this model and arrived at predictions which closely match the measured results. The CTE was also observed to have a nonlinear dependence on signal level. Using two-dimensional device simulations to examine the distribution of the charge packets in the CCD channel over a range of signal levels, they were able to explain the observed variation.
- OSTI ID:
- 616410
- Journal Information:
- IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 2 Vol. 45; ISSN 0018-9499; ISSN IETNAE
- Country of Publication:
- United States
- Language:
- English
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