Proton radiation damage in high-resistivity n-type silicon CCDs

Conference · Wed Dec 19 23:00:00 EST 2001

OSTI ID:826087

Bebek, C J ^[1]; Groom, D E; Holland, S E; Karcher, A; Kolbe, W F; Lee, J; Levi, M E; Palaio, N P; Turko, B T; Uslenghi, M C; Wagner, M T; Wang, G

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1. LBNL Library

A new type of p-channel CCD constructed on high-resistivity n-type silicon was exposed to 12 MeV protons at doses up to 1x1011 protons/cm2. The charge transfer efficiency was measured as a function of radiation dose and temperature. We previously reported that these CCDs are significantly more tolerant to radiation damage than conventional n-channel devices. In the work reported here, we used pocket pumping techniques and charge transfer efficiency measurements to determine the identity and concentrations of radiation induced traps present in the damaged devices.

• Research Organization: Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
• Sponsoring Organization: USDOE Director. Office of Science. Office of High Energy Physics; NSF/ATI, NASA/SADD, USAF (US)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 826087
• Report Number(s): LBNL--49933
• Country of Publication: United States
• Language: English

Related Subjects

47 OTHER INSTRUMENTATION
CCD RADIATION DAMAGE HIGH RESISTIVITY SILICON CHARGE TRANSFER EFFICIENCY
EFFICIENCY
PROTONS
PUMPING
RADIATION DOSES
RADIATIONS
SILICON