Charge Transfer Efficiency modeling/measurements as function of CCD pixel rate
- Los Alamos National Lab., NM (United States)
- Sharpenit, Ellwood, CA (United States)
We have developed a charge transport model for predicting the effects on Charge Transfer Efficiency (CTE) of Charge Coupled Devices (CCDs) as functions of number of transfers, pixel charge flow rate, and magnitude in the CCD`s vertical and horizontal charge transport mediums. The model uses carrier lifetime an mobility criteria to establish pixel speed arguments and limitations for various CCD architectures. The model is compared with experimental measurements obtained using strobed single pixel illumination and a variant of the deferred charge tail technique while independently varying the CCD pixel rates for both the vertical and horizontal readout phases. The generic model is discussed and applied to specific real CCDs. Agreement between predicted performance and actual measured performance is presented.
- Research Organization:
- Los Alamos National Lab., NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-36
- OSTI ID:
- 105057
- Report Number(s):
- LA-UR--95-2408; CONF-950793--18; ON: DE95016890
- Country of Publication:
- United States
- Language:
- English
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