Integrated circuit with dissipative layer for photogenerated carriers
Patent
·
OSTI ID:6157863
The sensitivity of an integrated circuit to single-event upsets is decreased by providing a dissipative layer of silicon nitride between a silicon substrate and the active device. Free carriers generated in the substrate are dissipated by the layer before they can build up charge on the active device. 1 fig.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- Assignee:
- Dept. of Energy
- Patent Number(s):
- PATENTS-US-A7183807
- Application Number:
- ON: DE89010084
- OSTI ID:
- 6157863
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
CHARGE CARRIERS
CURRENTS
DESIGN
ELECTRIC CURRENTS
ELECTRONIC CIRCUITS
INTEGRATED CIRCUITS
INVENTIONS
LOGIC CIRCUITS
MICROELECTRONIC CIRCUITS
NITRIDES
NITROGEN COMPOUNDS
PHOTOCURRENTS
PNICTIDES
SILICON COMPOUNDS
SILICON NITRIDES
SUBSTRATES
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
CHARGE CARRIERS
CURRENTS
DESIGN
ELECTRIC CURRENTS
ELECTRONIC CIRCUITS
INTEGRATED CIRCUITS
INVENTIONS
LOGIC CIRCUITS
MICROELECTRONIC CIRCUITS
NITRIDES
NITROGEN COMPOUNDS
PHOTOCURRENTS
PNICTIDES
SILICON COMPOUNDS
SILICON NITRIDES
SUBSTRATES