Integrated circuit with dissipative layer for photogenerated carriers
Patent
·
OSTI ID:6157863
The sensitivity of an integrated circuit to single-event upsets is decreased by providing a dissipative layer of silicon nitride between a silicon substrate and the active device. Free carriers generated in the substrate are dissipated by the layer before they can build up charge on the active device. 1 fig.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- DOE Contract Number:
- AC04-76DP00789
- Assignee:
- Dept. of Energy
- Patent Number(s):
- PATENTS-US-A7183807
- Application Number:
- ON: DE89010084
- OSTI ID:
- 6157863
- Resource Relation:
- Other Information: Portions of this document are illegible in microfiche products
- Country of Publication:
- United States
- Language:
- English
Similar Records
Integrated circuit with dissipative layer for photogenerated carriers
Integrated circuit with dissipative layer for photogenerated carriers
Final report for CCS cross-layer reliability visioning study
Patent
·
Sun Jan 01 00:00:00 EST 1989
·
OSTI ID:6157863
Integrated circuit with dissipative layer for photogenerated carriers
Patent
·
Tue Sep 12 00:00:00 EDT 1989
·
OSTI ID:6157863
Final report for CCS cross-layer reliability visioning study
Technical Report
·
Mon Dec 20 00:00:00 EST 2010
·
OSTI ID:6157863
Related Subjects
42 ENGINEERING
INTEGRATED CIRCUITS
DESIGN
CHARGE CARRIERS
ELECTRONIC CIRCUITS
INVENTIONS
LOGIC CIRCUITS
PHOTOCURRENTS
SILICON NITRIDES
SUBSTRATES
CURRENTS
ELECTRIC CURRENTS
MICROELECTRONIC CIRCUITS
NITRIDES
NITROGEN COMPOUNDS
PNICTIDES
SILICON COMPOUNDS
420800* - Engineering- Electronic Circuits & Devices- (-1989)
INTEGRATED CIRCUITS
DESIGN
CHARGE CARRIERS
ELECTRONIC CIRCUITS
INVENTIONS
LOGIC CIRCUITS
PHOTOCURRENTS
SILICON NITRIDES
SUBSTRATES
CURRENTS
ELECTRIC CURRENTS
MICROELECTRONIC CIRCUITS
NITRIDES
NITROGEN COMPOUNDS
PNICTIDES
SILICON COMPOUNDS
420800* - Engineering- Electronic Circuits & Devices- (-1989)