Niobium thin-film point-contact Josephson junction

Journal Article · Sun May 01 04:00:00 EDT 1983 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.332282· OSTI ID:6157110

Naito, S; Higashino, Y; Ibuka, M

A stable, niobium thin-film point-contact Josephson junction can be fabricated using rf magnetron sputtering and electron beam lithography. Constant-voltage steps based on a ac Josephson effect are observed up to a voltage level of 4 mV at 4.2 K when a 9-GHz microwave signal is applied. This voltage level is the highest for any thin-film weak link except for the tunnel junction.

• Research Organization: Yokogawa Electric Works, Musashino-shi, Tokyo 180, Japan
• OSTI ID: 6157110
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 54:5; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

420201* -- Engineering-- Cryogenic Equipment & Devices
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALTERNATING CURRENT
BEAMS
CURRENTS
DIMENSIONS
ELECTRIC CONTACTS
ELECTRIC CURRENTS
ELECTRICAL EQUIPMENT
ELECTROMAGNETIC RADIATION
ELECTRON BEAMS
ELECTRON TUBES
ELECTRONIC EQUIPMENT
ELEMENTS
EQUIPMENT
FABRICATION
FILMS
FREQUENCY RANGE
GHZ RANGE
JOSEPHSON EFFECT
JOSEPHSON JUNCTIONS
JUNCTIONS
LEPTON BEAMS
MAGNETRONS
METALS
MICROWAVE EQUIPMENT
MICROWAVE RADIATION
MICROWAVE TUBES
NIOBIUM
PARTICLE BEAMS
RADIATIONS
RF SYSTEMS
SPUTTERING
STABILITY
SUPERCONDUCTING JUNCTIONS
THICKNESS
TRANSITION ELEMENTS
ULTRALOW TEMPERATURE