Compound semiconductor heterojunction device technologies for high-temperature (T > 300/sup 0/C), power electronics
Recent advances in compound semiconductor materials and devices are reviewed as they relate to electronics intended for power switching and control applications at temperatures in excess of 300/sup 0/C. The problems faced by solid-state devices operating simultaneously at high currents, voltages, and temperatures are detailed and solutions offered by the use of alternative materials such as GaAs, GaP, (Al,Ga)As, and (Al,Ga)P, and use of novel heterojunction techniques for the control of parasitics, are presented. Prototype, low-power, (Al,Ga)As/GaAs heterojunction diodes, bipolar transistors, and semiconductor controlled rectifiers are described which have demonstrated excellent electrical characteristics in the 300 to 400/sup 0/C temperature range. These studies imply that a heterojunction, (Al,Ga)As/GaAs, power semiconductor electronics technology is feasible in the near future.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6155752
- Report Number(s):
- SAND-87-0021C; CONF-870804-9; ON: DE87010475
- Country of Publication:
- United States
- Language:
- English
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Survey of materials and device technologies for high-temperature (T > 300/sup 0/C), power semiconductor electronics
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Related Subjects
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71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
ELECTRICAL EQUIPMENT
EQUIPMENT
GALLIUM ALLOYS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HIGH TEMPERATURE
JUNCTION DIODES
JUNCTION TRANSISTORS
JUNCTIONS
MATERIALS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RECTIFIERS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SEMICONDUCTOR RECTIFIERS
SEMICONDUCTOR SWITCHES
SWITCHES
TEMPERATURE EFFECTS
TRANSISTORS