Survey of materials and device technologies for high-temperature (T > 300/sup 0/C), power semiconductor electronics
Recent advances in solid-state materials and device technologies are reviewed as they relate to power semiconductor electronics functioning at temperatures in excess of 300/sup 0/C. The problems faced by semiconductor structures operating in this temperature range are described and six compound semiconductor materials systems capable of improved high-temperature device function, when compared to silicon technologies, are detailed and critiqued. In this light, a number of prototype junction devices including diodes, bipolar junction transistors, and semiconductor controlled rectifiers are described which have demonstrated useful electrical characteristics to temperatures as high as 550/sup 0/C. In conclusion, the major reliability concerns associated with high-temperature operation are addressed and potential solutions described.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA). 1141 Div.
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5157103
- Report Number(s):
- SAND-86-2151C; CONF-8610142-1; ON: DE86015822
- Country of Publication:
- United States
- Language:
- English
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