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Junction internal field effects on performance of N-I-P amorphous silicon solar cells

Conference · · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
OSTI ID:6150324
This paper discusses the consequences of this and other effects of electric field strength on conversion efficiency. In the n-i-p a-Si:H cell, the photo carriers that contributed to device short circuit current are those which are mainly generated in the i layer and separated by junction field. Recombination at the space charge region and at the interfaces of n-i and p-i junctions has a predominant effect on the cell performance. If the junction field is not strong enough, most of the photocarriers will be recombined in the space charge region, because the lifetime of the carrier is very short.
Research Organization:
Tianjin Institute of Power Sources, Tianjin
OSTI ID:
6150324
Report Number(s):
CONF-840561-
Conference Information:
Journal Name: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
Country of Publication:
United States
Language:
English