Revised model of asymmetric p-n junctions
Journal Article
·
· Appl. Phys. Lett.; (United States)
The standard physical model by which p-n junctions in semiconductors are generally analyzed is shown to need significant revisions when applied to strongly asymmetrical junctions, such as commonly used in diffused silicon transistor emitters and solar cells. The potential, field, and space-charge density have much wider spatial distributions on the heavily doped side than generally thought, thus, in effect, widening the ''junction region'' there. In addition, Auger processes on that side can reduce the minority-carrier lifetime sufficiently to cause recombination without defects in the widened space-charge region and a consequent excess junction saturation current not previously recognized.
- Research Organization:
- RCA Laboratories, Princeton, New Jersey 08540
- OSTI ID:
- 6022728
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 35:2; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ASYMMETRY
AUGER EFFECT
CHARGE CARRIERS
CHARGE DENSITY
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIFFUSION
DIRECT ENERGY CONVERTERS
DISTRIBUTION
DOPED MATERIALS
ELECTRIC FIELDS
ELECTRIC POTENTIAL
JUNCTIONS
LIFETIME
MATHEMATICAL MODELS
P-N JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
RECOMBINATION
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SPACE CHARGE
SPATIAL DISTRIBUTION
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ASYMMETRY
AUGER EFFECT
CHARGE CARRIERS
CHARGE DENSITY
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIFFUSION
DIRECT ENERGY CONVERTERS
DISTRIBUTION
DOPED MATERIALS
ELECTRIC FIELDS
ELECTRIC POTENTIAL
JUNCTIONS
LIFETIME
MATHEMATICAL MODELS
P-N JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
RECOMBINATION
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SPACE CHARGE
SPATIAL DISTRIBUTION