On the limit of the injection ability of silicon p{sup +}–n junctions as a result of fundamental physical effects

Journal Article · Thu Jun 15 04:00:00 EDT 2017 · Semiconductors

DOI:https://doi.org/10.1134/S1063782617060227· OSTI ID:22756490

Levinshtein, M. E.; Shuman, V. B. ^[1]; Seredin, B. M. ^[2]

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1. Russian Academy of Sciences, Ioffe Institute (Russian Federation)
2. Platov South-Russian State Polytechnic University (Russian Federation)

Analytical expressions describing the dependences of the p{sup +}–n-junction leakage current on the doping level of the p{sup +}-type region are derived by taking into account a whole set of nonlinear physical effects: electron–hole scattering, Auger recombination, band-gap narrowing, and nonlinear dependences of the charge-carrier lifetime and mobility on the doping level. It is shown that the dependence for the leakage current has a minimum at which the injection ability of the p{sup +}-type emitter is at a maximum. The dependence of the extremum position on the main parameters of the heavily doped p{sup +} layer is analyzed. The data obtained make it possible to optimize the structure of high-power silicon devices and to facilitate the adequacy of numerical calculations.

• OSTI ID: 22756490
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 6 Vol. 51; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARRIER LIFETIME
CHARGE CARRIERS
DOPED MATERIALS
INJECTION
LEAKAGE CURRENT
NONLINEAR PROBLEMS
SILICON