Mobility-lifetime product and interface property in amorphous silicon solar cells
The mobility-lifetime products ( ..mu..tau) and interface property have been examined through the photovoltaic studies in actual hydrogenated amorphous silicon (a--Si:H) p--i--n junction solar cells. A small amount of boron atoms included in a--Si:H enhances the ..mu..tau products of both electrons and holes up to the order of 10/sup -7/ cm/sup 2//V, which corresponds to the carrier diffusion length in excess of 5000 A. The doped window layer possessing inferior photoelectric property works as the recombination region for photocarriers generated in the active i layer, and practically dominates the interface property together with the surface recombination velocity S/sub 0/ at the electrode/doped layer interface. The S/sub 0/ at the SnO/sub 2//p a--Si:H interface is estimated to be about 3 x 10/sup 2/ cm/s with an assumption of the electron mobility at 0.1 cm/sup 2//Vs. Prolonged light exposure causes a reversible change of the ..mu..tau products in every layer composing the p--i--n junction. These experimental results are discussed in connection with photovoltaic performances.
- Research Organization:
- Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, Japan 560
- OSTI ID:
- 6104285
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 54:6; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
AMORPHOUS STATE
BORON
CHARGE CARRIERS
CHEMICAL REACTIONS
DIFFUSION LENGTH
DIMENSIONS
DIRECT ENERGY CONVERTERS
ELECTRON MOBILITY
ELECTRONS
ELEMENTARY PARTICLES
ELEMENTS
EQUIPMENT
FERMIONS
HOLES
HYDROGENATION
INTERFACES
JUNCTIONS
LENGTH
LEPTONS
LIFETIME
MOBILITY
PARTICLE MOBILITY
PHOTOELECTRIC CELLS
PHOTOELECTRIC EFFECT
PHOTOELECTROMAGNETIC EFFECTS
PHOTOVOLTAIC CELLS
PHOTOVOLTAIC EFFECT
RECOMBINATION
SEMIMETALS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT