Improved amorphous Si solar cells. Quarterly progress report No. 5, February 1-April 30, 1981
Both n and p-type a-Si:H films with very high conductivities have been grown by diluting SiH/sub 4/ in Ar or H/sub 2/. These films have Fermi levels close to the conduction and valence bands (0.03 eV). The use of these heavily doped films as p/sup +/ and n/sup +/ junction layers in a p/sup +/in/sup +/ cell should increase the diffusion voltage of the diode, thereby increasing both J/sub sc/ and V/sub oc/. The analysis of conductivity and thermoelectric power on films of diverse thickness have revealed no systematic changes. However, the drift mobility shows a systematic increase with thickness. The analysis of cells by studying quantum efficiency vs. applied voltage has revealed the electron (..mu.. tau) product is limiting transport in nip cells and not the hole (..mu.. tau) product. Analysis reveals that typically (..mu.. tau)/sub eta/ = 10/sup -9/ cm/sup 2//V. A new device design, Tandem parallel-connected cells, has been evolved to improve the current collection in a-Si cells. This design may help increase J/sub sc/ to 15 to 16 mA/cm/sup 2/ in a-Si:H.
- Research Organization:
- Solar Energy Research Inst., Golden, CO (USA); Delaware Univ., Newark (USA). Inst. of Energy Conversion
- DOE Contract Number:
- AC02-77CH00178
- OSTI ID:
- 5516163
- Report Number(s):
- SERI/PR-9195-1-T3; ON: DE82006886
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
AMORPHOUS STATE
CARRIER LIFETIME
CARRIER MOBILITY
CHARGE CARRIERS
CRYSTAL DOPING
CRYSTAL GROWTH
CURRENTS
DESIGN
DIMENSIONS
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRIC CONDUCTIVITY
ELECTRIC CONTACTS
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELEMENTS
EQUIPMENT
EVAPORATION
HYDROGEN ADDITIONS
LIFETIME
MATERIALS
MOBILITY
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
PHASE TRANSFORMATIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
QUANTUM EFFICIENCY
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SPUTTERING
THERMOELECTRIC PROPERTIES
THICKNESS
VACUUM EVAPORATION
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
AMORPHOUS STATE
CARRIER LIFETIME
CARRIER MOBILITY
CHARGE CARRIERS
CRYSTAL DOPING
CRYSTAL GROWTH
CURRENTS
DESIGN
DIMENSIONS
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRIC CONDUCTIVITY
ELECTRIC CONTACTS
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELEMENTS
EQUIPMENT
EVAPORATION
HYDROGEN ADDITIONS
LIFETIME
MATERIALS
MOBILITY
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
PHASE TRANSFORMATIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
QUANTUM EFFICIENCY
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SPUTTERING
THERMOELECTRIC PROPERTIES
THICKNESS
VACUUM EVAPORATION