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U.S. Department of Energy
Office of Scientific and Technical Information

Amorphous thin films for solar-cell applications. Quarterly report No. 1, 11 September-10 December 1979

Technical Report ·
DOI:https://doi.org/10.2172/5355333· OSTI ID:5355333
Research progress on amorphous Si:H solar cells is described. Tasks include theoretical modeling, deposition and doping studies, experimental characterization of a-Si:H, formation of solar cell structures, and evaluation of solar cell parameters. A new method for determining the drift mobility of majority carriers in doped a-Si:H is discussed. Deposition and doping studies have been performed in an rf magnetron discharge system. Mass spectroscopy has been used to show that the major impurities in the SiH/sub 4/ discharge occur at m/e values of 45, 47, and 49 at concentrations 10/sup -4/-10/sup -5/ times that of the principal ion, SiH/sub 3//sup +/. Boron implantation of an i-n structure produces a p-i-n cell with an enhanced V/sub oc/ but reduced J/sub sc/ as compared to cells in a nonimplanted region. Laser annealing at power densities up to 60 MW/cm/sup 2/ (30-ns pulse) causes partial crystallization of the a-Si:H, but there are no significant changes in the photoluminescence spectrum or the hydrogen content. the photo-Hall effect in undoped a-Si:H has been measured as a function of wave-length and temperature. The photoelectromagnetic spectrum for the short-circuit current has been used to estimate a hole diffusion length of approx.0.1-0.3 ..mu..m in undoped a-Si:H. Recently p-i-n cells have been fabricated with conversion efficiencies up to approx. 4.5%. Both boron and phosphorus concentrations were found to vary inversely with rf power for doped a-Si:H films made in an rf capacitive discharge. Solar cells have also been fabricated with a-(Si,Ge):H alloys. (WHK)
Research Organization:
RCA Labs., Princeton, NJ (USA)
DOE Contract Number:
AC02-77CH00178
OSTI ID:
5355333
Report Number(s):
SERI/PR-8254-1-T1
Country of Publication:
United States
Language:
English