The bandgap-selective photoelectrochemical etching of GaAs/Al[sub x]Ga[sub 1[minus]x]As heterostructures with varying mole fraction
Journal Article
·
· Journal of the Electrochemical Society; (United States)
- Univ. of California, Santa Barbara, CA (United States). Dept. of Electrical and Computer Engineering
The authors have demonstrated the highly selective removal of low aluminum (Al) mole-fraction Al[sub x]Ga[sub 1[minus]x]As layers from those with higher Al mole-fraction using the wet photoelectrochemical (PEC) etch process. AGaAs/Al[sub x]Ga[sub 1[minus]x]As semiconductor structure with layers of varying Al mole-fraction was examined. The sample was etched in a (1:20) HCl:H[sub 2]O electrolyte solution. A Ti/sapphire laser was used as the light source to tune the incident photon energy between the various bandgaps of the heterostructure layers. Relative etch rates >10[sup 4]:1 and >10[sup 3]:1 were found for mole fraction differences in x of 0.15 and 0.05, respectively. The selectivity was examined as a function of incident wavelength.
- OSTI ID:
- 6147293
- Journal Information:
- Journal of the Electrochemical Society; (United States), Journal Name: Journal of the Electrochemical Society; (United States) Vol. 140:7; ISSN 0013-4651; ISSN JESOAN
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHLORINE COMPOUNDS
ELECTROCHEMICAL CELLS
ELECTROMAGNETIC RADIATION
EQUIPMENT
ETCHING
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HALOGEN COMPOUNDS
HYDROCHLORIC ACID
HYDROGEN COMPOUNDS
INORGANIC ACIDS
LASER RADIATION
LASERS
MATERIALS
PHOTOELECTROCHEMICAL CELLS
PNICTIDES
RADIATIONS
SEMICONDUCTOR MATERIALS
SOLAR EQUIPMENT
SURFACE FINISHING
WAVELENGTHS
360601* -- Other Materials-- Preparation & Manufacture
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHLORINE COMPOUNDS
ELECTROCHEMICAL CELLS
ELECTROMAGNETIC RADIATION
EQUIPMENT
ETCHING
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HALOGEN COMPOUNDS
HYDROCHLORIC ACID
HYDROGEN COMPOUNDS
INORGANIC ACIDS
LASER RADIATION
LASERS
MATERIALS
PHOTOELECTROCHEMICAL CELLS
PNICTIDES
RADIATIONS
SEMICONDUCTOR MATERIALS
SOLAR EQUIPMENT
SURFACE FINISHING
WAVELENGTHS