Selective etching of Al[sub x]Ga[sub 1[minus]x]As and In(Al[sub x]Ga[sub 1[minus]x])As alloys in succinic acid-hydrogen peroxide solutions

Conference · Sat May 01 04:00:00 EDT 1993 · Journal of the Electrochemical Society; (United States)

OSTI ID:6446201

Tang, A J; Sadra, K; Streetman, B G ^[1]

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1. Univ. of Texas, Austin (United States)

Selective etching plays a vital role in compound semiconductor device fabrication. Succinic acid-hydrogen peroxide solutions were used to etch Al[sub x]Ga[sub 1[minus]x]As and In(Al[sub x]Ga[sub 1[minus]x])As alloys, and the etch rates were investigated with the varying alloy mole fractions. It was found that Al[sub x]Ga[sub 1[minus]x]As (x[le]0.4) may be selectively etched over Al[sub y]Ga[sub 1[minus]y]As(y[ge]0.5), with a selectivity better than 150. Extended surface exposure to air was found to affect the etch rates, most interestingly for Al[sub 0.4]Ga[sub 0.6]As. In the In(Al[sub x]Ga[sub 1[minus]x])As system, alloys with x[le]0.8 can be preferentially etched over In[sub 0.52]Al[sub 0.48]As with a selectivity of better than 20.

• OSTI ID: 6446201
• Report Number(s): CONF-901101--
• Conference Information: Journal Name: Journal of the Electrochemical Society; (United States) Journal Volume: 140:5
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
ALLOYS
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CARBOXYLIC ACIDS
DICARBOXYLIC ACIDS
ETCHING
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HYDROGEN COMPOUNDS
HYDROGEN PEROXIDE
INDIUM ARSENIDES
INDIUM COMPOUNDS
INTERMETALLIC COMPOUNDS
ORGANIC ACIDS
ORGANIC COMPOUNDS
OXYGEN COMPOUNDS
PEROXIDES
PNICTIDES
SEMICONDUCTOR DEVICES
SUCCINIC ACID
SURFACE FINISHING