Investigation of electrochemical etch differences in AlGaAs heterostructures using Cl{sub 2} ion beam assisted etching
Journal Article
·
· Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
- Massachusetts Institute of Technology Lincoln Laboratory, 244 Wood St., Lexington, Massachusetts 02420 and Department of Physics and Applied Physics, University of Massachusetts Lowell, 1 University Ave., Lowell, Massachusetts 01854 (United States)
- Massachusetts Institute of Technology Lincoln Laboratory, 244 Wood St., Lexington, Massachusetts 02420 (United States)
A deeply etched, anisotropic 45° and 90° mirror technology is developed for Al{sub x}Ga{sub 1−x}As heterostructures using a Cl{sub 2} ion beam assisted etching system. When etching vertically, using a conductive low-erosion Ni mask, electrochemical etch differences between layers with various Al mole fractions caused nonuniform sidewall profiles not seen in semi-insulating GaAs test samples. These variations, based on alloy composition, were found to be negligible when etching at a 45°. A Si{sub 3}N{sub 4}-Ni etch mask is designed in order to electrically isolate charge buildup caused by the incoming Ar{sup +} ion beam to the Ni layer, preventing conduction to the underlying epitaxial layers. This modification produced smoothly etched facets, up to 8 μm in depth, enabling fabrication of substrate–surface-emitting slab-coupled optical waveguide lasers and other optoelectronic devices.
- OSTI ID:
- 22392137
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films Journal Issue: 2 Vol. 33; ISSN 0734-2101; ISSN JVTAD6
- Country of Publication:
- United States
- Language:
- English
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