Self-aligned structure InGaAsP/InP DH lasers

Journal Article · Wed Aug 01 00:00:00 EDT 1979 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.91081· OSTI ID:6136602

Nishi, H; Yano, M; Nishitani, Y; Akita, Y; Takusagawa, M

Self-aligned structure InGaAsP/InP DH lasers with emission wavelengths near 1.3 ..mu..m are studied. A cw threshold of about 100 mA is obtained in these lasers with cavity lengths of about 300 ..mu..m at a heat sink temperature of 25 /sup 0/C. Light output increases linearly with current for outputs of 10 mW per facet and no kinks appear. Fundamental-transverse and single-longitudinal mode oscillation, and stable operation of fundamental-transverse mode against injection current, are achieved. A cw operation up to 72 /sup 0/C is obtained with a laser.

• Research Organization: Fujitsu Laboratories, Ltd., 1015 Kamikodanaka, Nakaharaku, Kawasi 211, Japan
• OSTI ID: 6136602
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 35:3; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
ELEMENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT SINKS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASER CAVITIES
LASERS
MEDIUM TEMPERATURE
NONMETALS
OSCILLATION MODES
PHOSPHIDES
PHOSPHORUS
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
WAVELENGTHS