InGaAsP/InP separated multiclad layer stripe geometry laser emitting at 1. 5. mu. m wavelength

Journal Article · Wed Jun 01 00:00:00 EDT 1983 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1983.1071959· OSTI ID:5364941

Imai, H; Hori, K I; Ishikawa, H; Tanahashi, T

The authors have developed an InGaAsP/InP separated multiclad layer (SML) stripe geometry laser emitting at 1.5 ..mu..m wavelength. In this laser, the optical confinement is done by the effective refractive index step owing to the formation of the coupled waveguide outside the stripe region. The current confinement is done by the p-n-p-n structure outside the stripe region. The CW threshold current at 25/sup 0/C is only 82 mA for the stripe width and the cavity length of 6 ..mu..m and 250 ..mu..m, respectively. The maximum temperature where the CW lasing is obtained is 65/sup 0/C. The characteristic temperature of the threshold current is 60 K. The transverse mode is fundamental up to 1.8 times the threshold. Ten samples are operated at 50/sup 0/C with constant optical output of 5 mW/facet. These samples are still operating at over 10,000 h with a slight increase in the driving current. The appreciable change in the characteristics due to aging is not observed.

• Research Organization: Fujitsu Laboratories Ltd., Atsugi, 1677 Ono, Atsugi 243-01
• OSTI ID: 5364941
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-19:6; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AGING
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DESIGN
ELECTRIC CURRENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GEOMETRY
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASERS
MATHEMATICS
OPTICAL PROPERTIES
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
REFRACTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
TEMPERATURE DEPENDENCE
THRESHOLD CURRENT
WAVEGUIDES
WAVELENGTHS