Studies of chemical vapor deposition of amorphous silicon and transparent electrodes for solar cells. II. Technical status report, 1 January 1984-31 March 1984

Technical Report · Mon Oct 01 00:00:00 EDT 1984

OSTI ID:6133355

Gordon, R; Kurtz, S; Proscia, J; Gustin, K; Chapple-Sokol, J; Strickler, D

This paper is the second in a series reporting research on chemical vapor deposition (CVD) of amorphous silicon and transparent electrodes for solar cells. It expands on a description of a surface photovoltage (SPV) apparatus and method for measuring minority carrier diffusion lengths in a-SiH films on both crystal silicon and stainless steel cell substrates. Films of titanium nitride were also examined on a variety of substrates, as were silica and alumina films.

• Research Organization: Harvard Univ., Cambridge, MA (USA)
• DOE Contract Number: AC02-83CH10093
• OSTI ID: 6133355
• Report Number(s): SERI/STR-211-2448; ON: DE85002916
• Resource Relation: Other Information: Portions are illegible in microfiche products
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
ALUMINIUM COMPOUNDS
CHALCOGENIDES
CHEMICAL COATING
DEPOSITION
DIRECT ENERGY CONVERTERS
ELECTRICAL EQUIPMENT
ELEMENTS
EQUIPMENT
MINERALS
NITRIDES
NITROGEN COMPOUNDS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC
140501* - Solar Energy Conversion- Photovoltaic Conversion