Ion-implantation-induced stress in glasses: Variation of damage mode efficiency with changes in glass structure

Conference · Thu Jan 01 04:00:00 EST 1987

OSTI ID:6115201

Arnold, G W

Ion implantation induces lateral stress in glass due to the volume dilatation in the implanted near-surface region. Cantilever-beam experiments allow these quantities to be measured as a function of fluence. For fused silica the stress data for various incident ions are found to scale with atomic collision energy deposition. In sharp contrast, Pyrex (alkali-borosilicate) glass, (1-x)(Na,K)/sub 2/O . xB/sub 2/O/sub 3/ . 3SiO/sub 2/ glass, and a soda-lime (microscope slide) glass, yield stress values which scale with energy deposition into electronic processes. More significantly, this mode of damage production is dominant for the nuclear waste glasses PNL 76-68 and SRP. The void space in fused silica allows room for displaced Si and/or O. For the complex alkali-containing silicates, the interstitial volume is restricted. In the latter case, the probability increases that permanent defects can be formed by ionization-induced bond-breaking and network relaxation. These data imply that alpha-particle ionization energy deposition may be an important factor in nuclear waste glass radiation damage production, but the magnitude of this contribution has not yet been evaluated.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6115201
• Report Number(s): SAND-87-0910C; CONF-870783-3; ON: DE87013523
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ARGON IONS
CHALCOGENIDES
CHARGED PARTICLES
ENERGY RANGE
GLASS
ION IMPLANTATION
IONS
KEV RANGE
MINERALS
NEON IONS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SILICA
SILICATES
SILICON COMPOUNDS
SILICON OXIDES
STRESSES
XENON IONS