Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Characteristics of quenched Y-Ba-Cu-O thin films on SrTiO/sub 3/ (100),(110) grown by organometallic chemical vapor deposition

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.101492· OSTI ID:6114694
A thin Y-Ba-Cu-O film was formed by the organometallic chemical vapor deposition (OMCVD) method. The substrates used were (100) and (110) SrTiO/sub 3/. After forming Y-Ba-Cu-O at 800 /sup 0/C, it was cooled at a rate of 100 /sup 0/C/min in O/sub 2/ under 1 atm. This film was c-axis oriented, with its (001) surface grown in parallel to the (100) surface of SrTiO/sub 3/ and T/sub c/ = 88 K. The (110) surface of Y-Ba-Cu-O was grown in parallel to the substrate crystal and T/sub c/ = 84 K on the (110) surface of SrTiO/sub 3/. After forming, these films were quenched in air from 800 /sup 0/C to room temperature. The change in resistance of the quenched sample with temperature was metallic, T/sub onset/ = 75 K, and T/sub c/ = 60 K.
Research Organization:
Research Laboratory, Oki Electric Industry Company, Ltd., 550-5 Higashiasakawa-cho, Hachioji, Tokyo 193, Japan
OSTI ID:
6114694
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 54:18; ISSN APPLA
Country of Publication:
United States
Language:
English

Similar Records

Fabrication of YBa sub 2 Cu sub 3 O sub 7 minus x superconducting thin films by organometallic chemical vapor deposition
Journal Article · Fri Sep 01 00:00:00 EDT 1989 · Journal of Solid State Chemistry; (USA) · OSTI ID:6951097

Y-Ba-Cu-O superconducting films prepared on SrTiO/sub 3/ substrates by chemical vapor deposition
Journal Article · Mon Oct 17 00:00:00 EDT 1988 · Appl. Phys. Lett.; (United States) · OSTI ID:6845368

Epitaxial growth of YBa/sub 2/Cu/sub 3/O/sub 7//sub -//sub x/ thin films on (110) SrTiO/sub 3/ single crystals by activated reactive evaporation
Journal Article · Sun Nov 27 23:00:00 EST 1988 · Appl. Phys. Lett.; (United States) · OSTI ID:6747086